Methods of selectively oxidizing semiconductor structures, and structures resulting therefrom
AssigneeMicron Technology, Inc.
InventorsYongjun Jeff Hu, Allen McTeer, Naga Chandrasekaran
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Abstract
Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed.
Claims27
A method for selectively oxidizing a semiconductor structure, comprising:
- generating a gas cluster ion beam comprising an oxidizing matter;
- and
- directing the gas cluster ion beam toward a region of a surface of the semiconductor structure adjacent at least one conductive element formed on the surface of the semiconductor structure.
A method of fabricating a semiconductor device, comprising:
- exposing a region of a substrate of the semiconductor device adjacent a gate stack to a gas cluster ion beam comprising oxidizing matter.
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A method for selectively oxidizing a semiconductor structure, comprising:
- targeting at least one region on a semiconductor structure, the at least one region comprising a degraded oxide material;
- contacting a surface of the at least one region with atomized gas comprising oxygen;
- and
- reoxidizing the degraded oxide material.
Dependencies are inferred from the claim text.