Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device

A method of producing an integrated circuit device, comprising:

• forming a trench structure having trench walls in a semiconductor body for a cell field and an edge trench in an edge region;
• forming mesa structures for drift zones of a first conduction type in the cell field;
• applying an oxide layer forming a field plate isolation on the trench walls and a field oxide in the edge region of a front side of the semiconductor body;
• introducing field plate material into the trench structure and the edge trench;
• exposing upper regions of the trench walls in the cell field;
• applying a gate oxide to the exposed upper region of the trench walls;
• introducing a gate electrode material into the upper regions of the trench structure;
• and
• ion implantation of doping materials for a complementary conduction type accompanied by the formation of body zones on the mesa structures in the cell field and by the formation of an edge zone of a complementary conduction type with doping materials of the body zone below the field oxide in the edge region within and outside the edge trench.