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US 2009/0152622 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Itokawa, Ichiro Mizushima
Life of this patent
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Abstract
A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.
Claims17
A semiconductor device comprising:
- a first semiconductor region having a channel region, and containing silicon as a main component;
- second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region;
- cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon;
- and
- silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.
2 more elements
A semiconductor device comprising:
- a first semiconductor region having a channel region, and containing silicon as a main component;
- second semiconductor regions sandwiching the first semiconductor region, formed of SiGe containing carbon whose concentration increases from a bottom portion toward a top portion of the second semiconductor region, and applying stress to the first semiconductor region;
- and
- silicide layers provided on the second semiconductor regions, and formed of nickel silicide or nickel-platinum alloy silicide.
1 more element
Dependencies are inferred from the claim text.