ATOMIC LAYER DEPOSITION OF GdScO3 FILMS AS GATE DIELECTRICS

A system comprising:

• a controller;
• an electronic device coupled to the controller, wherein the electronic device includes:
• a dielectric layer comprising an atomic layer deposited dielectric layer of gadolinium oxide and scandium oxide in an integrated circuit;
• and
• a conductive layer contacting the dielectric layer.

A transistor comprising:

• a semiconductive substrate having a first type conductivity and first doping level;
• at least two regions disposed near a top surface of the semiconductive substrate each having a second type conductivity and a second doping level, the at least two regions separated by a region of the first conductivity type having a first lateral dimension along the top surface of the semiconductive substrate;
• a dielectric layer disposed above the top surface of at least a portion of the semiconductive substrate and overlapping at least a portion of each of the at least two regions disposed near a top surface of the semiconductive substrate;
• the dielectric layer including at least one scandium oxide layer and at least one gadolinium oxide layer;
• and
• a conductive layer contacting the dielectric layer.

A non-volatile transistor comprising:

• a semiconductive substrate having a first polarity type conductivity and first doping level;
• a first region disposed near a top surface of the semiconductive substrate having a second polarity type conductivity and a second doping level;
• a second region disposed near the top surface of the semiconductive substrate having the second polarity type conductivity and having a third doping level;
• the second region separated from the first region by a channel region having a selected distance, the channel region having the first conductivity type with a selected fourth doping level adjacent the first region and a selected fifth doping level adjacent the second region;
• a first dielectric layer disposed above the top surface of the semiconductive substrate and overlapping at least a portion of the first region and the second region;
• a first conductive layer disposed above the first dielectric layer and overlapping at least a portion of the first region and the second region;
• a second dielectric layer disposed above the first conductive layer and the first dielectric layer and overlapping at least a portion of the first region and the second region;
• a second conductive layer disposed above the second dielectric layer and overlapping at least a portion of the first conductive layer;
• and
• at least one of the first dielectric layer and the second dielectric layer including at least one scandium oxide layer and at least one gadolinium oxide layer.