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US 2009/0152615 A1Published application
Semiconductor device and method for manufacturing the same
OwnerJi-Ho Honginventor
Life of this patent
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Abstract
Embodiments relate to a semiconductor device that may include a floating gate, an inter poly dielectric formed on and/or over both sides of the floating gate in a bit line direction and on and/or over both side of the floating gate in a word line direction, and a control gate formed on and/or over the IPD. According to embodiments, an IPD may be formed on and/or over a top and four sides of a floating gate. This may increase a coupling ratio of a semiconductor device.
Claims20
A device comprising:
- a floating gate having sides in a bit line direction and sides in a word line direction;
- an inter poly dielectric (IPD) formed over both sides of the floating gate in the bit line direction and over both sides of the floating gate in the word line direction;
- and
- a control gate formed over the IPD.
1 more element
A method comprising:
- forming a first poly film over a semiconductor substrate;
- patterning a floating gate by etching the first poly film in a lattice form in a bit line direction and a word line direction;
- forming an inter poly dielectric (IPD) over the floating gate;
- forming a second poly film over the IPD;
- and then
- patterning a control gate by etching the second poly film.
3 more elements
A method comprising:
- forming a first poly film over a semiconductor layer;
- forming a photoresist film over the first poly film;
- performing a first exposure on the photoresist film in a first direction;
- performing a second exposure on the photoresist in a second direction different than the first direction after performing the first exposure;
- forming a floating gate patterned in a lattice form by etching the photoresist film and the first poly film after performing the second exposure;
- forming an inter poly dielectric (IPD) over the floating gate;
- forming a second poly film over the IPD;
- and then
- patterning a control gate by etching the second poly film.
6 more elements
Dependencies are inferred from the claim text.