Semiconductor integrated circuit device

A semiconductor integrated circuit device in which first and second CMIS circuits for outputting a first or second logic level signal according to an input signal are formed on a semiconductor substrate, wherein

• the first CMIS circuit comprises a first conductive type MISFET including a first conductive type first storage node diffusion layer for outputting the first logic level signal to the second CMIS circuit,
• the second CMIS circuit comprises a second conductive type MISFET including a second conductive type second storage node diffusion layer for outputting the second logic level signal to the first CMIS circuit,
• the first storage node diffusion layer and the second storage node diffusion layer are formed substantially in a rectangular shape,
• a gate electrode of an MISFET having the first conductive type first storage node diffusion layer and a gate electrode of an MISFET having the second conductive type second storage node diffusion layer are substantially in parallel with each other and are placed substantially in parallel with the Well boundary, and
• the first storage node diffusion layer and the second storage node diffusion layer are placed at more distant positions from the Well boundary than the first and second gate electrodes.