Spin Transistor Using Epitaxial Ferromagnet-Semiconductor Junction

A method for manufacturing a spin transistor, the method comprising:

• providing a semiconductor substrate having a channel layer formed therein;
• epitaxially growing a ferromagnetic layer on the semiconductor substrate;
• defining a longitudinal direction and width of the channel layer by patterning the ferromagnetic layer and the semiconductor substrate;
• defining a source and a drain by patterning the ferromagnetic layer, the source and the drain being disposed spaced apart from each other along the longitudinal direction of the channel layer;
• and
• forming a gate insulator and a gate on the resulting product, the gate insulator and the gate being disposed between the source and the drain,
• wherein, in the step of epitaxially growing a ferromagnetic layer, the ferromagnetic layer is grown in the form of crystal so that the ferromagnetic layer is magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy.