System and method for sensing image on CMOS
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsHong Zhu, Jim Yang
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AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsHong Zhu, Jim Yang
Estimating the term…
A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.
A CMOS image sensing pixel comprising:
A method for determining color using a CMOS image sensor, wherein the CMOS image sensor includes an n-type substrate and a p-type layer, the p-type layer overlaying the n-type substrate, the method comprising:
A method for forming a CMOS image sensing pixel, the CMOS image sensing pixel being configured for determining a color, the method comprising:
An imaging capturing device comprising:
Dependencies are inferred from the claim text.