Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorHag-Dong Kim
Life of this patent
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Abstract
Embodiments relate to an image sensor that may include transistors, a first dielectric, a crystalline semiconductor layer on and/or over the first dielectric, a photodiode, a dummy region, via contacts, and a second dielectric. A photodiode may be formed by implanting impurity ions into a crystalline semiconductor layer to correspond the pixel region. A dummy region may be formed in the crystalline semiconductor layer excepting a region for the photodiode. Via contacts may penetrate the dummy region, and may be connected to the first metal interconnections. A second dielectric may include a plurality of second metal interconnections on and/or over the crystalline semiconductor layer. The plurality of second metal interconnections may electrically connect the via contacts to the photodiode.
Claims20
A device comprising:
- at least one transistor over a pixel region of a first substrate;
- a first dielectric over the first substrate, the first dielectric including at least one first metal interconnection connected to the at least one transistor, respectively;
- a crystalline semiconductor layer over the first dielectric;
- a photodiode in the crystalline semiconductor layer formed in a region corresponding to the pixel region;
- a dummy region in the crystalline semiconductor layer excepting the region of the photodiode;
- at least one via contact penetrating the dummy region, and connected to the at least one first metal interconnection;
- and
- a second dielectric including at least one second metal interconnection over the crystalline semiconductor layer, wherein the at least one second metal interconnection electrically connects the at least one via contact to the photodiode.
A method comprising:
- forming a transistor over a pixel region of a first substrate;
- and then
- forming a first dielectric including a first metal interconnection over the first substrate, the first metal interconnection being connected to the transistor;
- and then
- forming a crystalline semiconductor layer over the first dielectric;
- and then
- selectively implanting impurity ions into the crystalline semiconductor layer to form a photodiode in a first portion of the crystalline semiconductor layer corresponding to the pixel region, and to form a dummy region in a second portion of the crystalline semiconductor layer not corresponding to the pixel region;
- and then
- forming a via contact that penetrates the dummy region and is connected to the first metal interconnection;
- and then
- forming a second dielectric including a second metal interconnection over the crystalline semiconductor layer, the second metal interconnection electrically connecting the via contact to the photodiode.
Dependencies are inferred from the claim text.