Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a first surface and a second surface facing each other;
• a first insulating film formed on said first surface of said semiconductor substrate and having a specific permittivity of 4 or higher;
• a circuit constituent element formed on said first surface of said semiconductor substrate and covered with said first insulating film;
• a contact plug formed in said first insulating film and electrically connected to said circuit constituent element;
• a through-substrate contact plug penetrating through said semiconductor substrate and said first insulating film;
• a second insulating film formed on said first insulating film and having a specific permittivity of 3.5 or lower;
• a first interconnect layer formed in said second insulating film and electrically connected to said through-substrate contact plug and said contact plug;
• a third insulating film formed on said second insulating film and having a specific permittivity of 3.5 or lower;
• a second interconnect layer formed in said third insulating film;
• a via contact formed in said third insulating film so as to electrically connect said first interconnect layer and said second interconnect layer;
• a first electrode formed in an exposed state and external to said third insulating film and electrically connected to said second interconnect layer;
• and
• a second electrode formed in an exposed state and external to said second surface of said semiconductor substrate and electrically connected to said through-substrate contact plug.

A method for manufacturing a semiconductor device, comprising:

• preparing a semiconductor substrate having a first surface and a second surface facing each other;
• forming a circuit constituent element on said first surface of said semiconductor substrate;
• forming a first insulating film having a specific permittivity of 4 or higher on said first surface of said semiconductor device, so as to cover said circuit constituent element;
• forming a contact plug to be electrically connected to said circuit constituent element in said first insulating film;
• forming a through-substrate contact plug penetrating through said semiconductor substrate and said first insulating film;
• forming a second insulating film having a specific permittivity of 3.5 or lower on said first insulating film after forming said through-substrate contact plug;
• forming an interconnect layer electrically connected to said through-substrate contact plug and said contact plug in said second insulating film;
• forming a first electrode in an exposed state and external to said second insulating film and electrically connected to said interconnect layer;
• and
• forming a second electrode in an exposed state and external to said second surface of said semiconductor substrate and electrically connected to said through-substrate contact plug.