# US 2009/0152598 A1 · Biosensor using silicon nanowire and method of manufacturing the same

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- Number: US 2009/0152598 A1
- Document ID: US20090152598A1
- Status: Published application
- Kind: A1
- Application number: 12/240,114
- Filed: 2008-09-29
- Published: 2009-06-18
- Earliest claimed: 2007-12-17
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: In Bok BAEK; Jong Heon Yang; Chang Geun Ahn; Han Young Yu; Chil Seong Ah; Chan Woo Park; An Soon Kim; Tae Youb Kim; Moon Gyu Jang; Myung Sim Jun
- Web page: https://patentgrep.com/patent/US20090152598A1

## CPC

- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.

## Claims

### Claim 1

A biosensor using a silicon nanowire, comprising:
a source electrode and a drain electrode formed on a semiconductor substrate;
a silicon nanowire, in which identical patterns are continuously repeated, disposed between the source electrode and the drain electrode; and
probe molecules fixed to the silicon nanowire to react with target molecules injected from the exterior.

### Claim 2 (depends on 1)

The biosensor according to claim 1, wherein the probe molecules are fixed to upper/lower and both side surfaces of the silicon nanowire, and a coupling reaction between the probe molecule and the target molecule is generated at the upper/lower and both side surfaces of the silicon nanowire.

### Claim 3 (depends on 1)

The biosensor according to claim 1, wherein detection sensitivity is varied depending on a gap between the identical patterns of the silicon nanowire.

### Claim 4 (depends on 1)

The biosensor according to claim 1, wherein a line width of the silicon nanowire and a gap between the identical patterns are varied depending on characteristics of the target molecules reacting with the probe molecules.

### Claim 5 (depends on 1)

The biosensor according to claim 1, wherein a gap between the identical patterns of the silicon nanowire is 5 to 200 nm.

### Claim 6 (depends on 1)

The biosensor according to claim 1, wherein when gaps between the identical patterns of the silicon nanowire are different from each other, at least one sensitivity is simultaneously detected.

### Claim 7 (depends on 1)

The biosensor according to claim 1, further comprising:
a fluid pipe for injecting the target molecules.

### Claim 8

A method of manufacturing a biosensor using a silicon nanowire, comprising:
forming a buffer layer on a semiconductor substrate in which an insulating layer and a silicon layer are sequentially formed;
forming an electrode pattern and a silicon nanowire pattern, in which identical patterns are continuously and repeatedly formed, on the buffer layer by a photolithography process;
etching the buffer layer and the silicon layer using the electrode pattern and the silicon nanowire pattern as an etching mask;
forming an electrode in a region of the electrode pattern;
removing the buffer layer formed on the silicon nanowire pattern to expose the silicon nanowire; and
fixing probe molecules to the exposed silicon nanowire to react with target molecules injected from the exterior.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the buffer layer is formed of a nitride layer or an oxide layer.

### Claim 10 (depends on 8)

The method according to claim 8, wherein the electrode pattern and the silicon nanowire pattern are formed by any one process selected from electron beam lithography, nano imprint, and photolithography.

### Claim 11 (depends on 8)

The method according to claim 8, wherein the forming a silicon nanowire pattern further comprises varying a line width of the silicon nanowire and a gap between the identical patterns depending on detection sensitivity.

### Claim 12 (depends on 8)

The method according to claim 8, wherein the forming a silicon nanowire pattern further comprises varying a line width of the silicon nanowire and a gap between the identical patterns depending on characteristics of the target molecules reacting with the probe molecules.

### Claim 13 (depends on 8)

The method according to claim 8, wherein a gap between the identical patterns of the silicon nanowire pattern is 5 to 200 nm.

### Claim 14 (depends on 8)

The method according to claim 8, further comprising:
after the forming a buffer layer and before the forming an electrode pattern and a silicon nanowire pattern,
selectively etching the buffer layer corresponding to a region, in which the silicon nanowire is to be formed, by a photolithography process to expose a region of the silicon layer in which the silicon nanowire is to be formed; and
reducing the thickness of the region of the silicon layer, in which the silicon nanowire is to be formed, by an etching or thermal oxidation process.

### Claim 15 (depends on 8)

The method according to claim 8, wherein the forming an electrode comprises:
forming a protection resist pattern for protecting the silicon nanowire pattern by a photolithography process;
injecting ions into the electrode pattern region;
removing the protection resist pattern;
performing heat treatment to form an ohmic contact in the electrode pattern region; and
removing the buffer layer in the electrode pattern region by a photolithography process to form a metal electrode.

### Claim 16 (depends on 8)

The method according to claim 8, further comprising:
forming a fluid pipe for injecting the target molecules.