Light emitting diode having active region of multi quantum well structure
AssigneeSeoul Opto Device Co., Ltd.
InventorsDong Seon Lee, Eu Jin Hwang
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Abstract
Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
Claims12
A light emitting diode (LED), comprising:
- a GaN-based N-type compound semiconductor layer;
- a GaN-based P-type compound semiconductor layer;
- and
- an active region of a multi quantum well structure having InGaN well layers and barrier layers alternately laminated, the active region being interposed between the N-type and P-type compound semiconductor layers,
- wherein at least one of the barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is positioned closer to the P-type compound semiconductor layer than the undoped InGaN layer.
An LED, comprising:
- a GaN-based N-type compound semiconductor layer;
- a GaN-based P-type compound semiconductor layer;
- and
- an active region of a multi quantum well structure having well layers and barrier layers alternately laminated, the active region being interposed between the N-type and P-type compound semiconductor layers,
- wherein the barrier layers are relatively thicker than the well layers;
- and the barrier layers positioned between the well layers include a plurality of relatively thick barrier layers having a thickness 1.3 to 3 times as large as that of the thinnest barrier layer and a plurality of relatively thin barrier layers having a thickness 1 to 1.3 times as large as that of the thinnest barrier layer.
Dependencies are inferred from the claim text.