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US 2009/0152584 A1Published application
Light emitting device with bonded interface
AssigneePhilips Lumileds Lighting Company, LLC
InventorsPATRICK N. GRILLOT, RAFAEL I. ALDAZ, DEBORAH L. COBLENTZ, ANNELI MUNKHOLM, HANMIN ZHAO
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Abstract
In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.
Claims26
A device comprising:
- a first semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region;
- a second semiconductor structure;
- and
- a bond formed at an interface disposed between the first and second semiconductor structures;
- wherein:
- the bond connects the first semiconductor structure to the second semiconductor structure;
- and
- a semiconductor layer adjacent to the interface is doped to a concentration of at least 2×1018 cm−3.
5 more elements
A method comprising:
- growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising:
- an etch stop layer with a thickness less than 150 Å;
- and
- an AlGaInP light emitting layer disposed between an n-type region and p-type region;
- removing the GaAs substrate;
- and
- bonding the first semiconductor structure to a second semiconductor structure.
4 more elements
A method comprising:
- growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising:
- an etch stop layer with a bulk lattice constant different from a lattice constant of GaAs;
- and
- an AlGaInP light emitting layer disposed between an n-type region and p-type region;
- removing the GaAs substrate;
- and
- bonding the first semiconductor structure to a second semiconductor structure.
4 more elements
Dependencies are inferred from the claim text.