Light-emitting diode device and manufacturing method thereof
AssigneeDelta Electronics, Inc.
InventorsChao-Min Chen, Shih-Peng Chen, Ching-Chuan Shiue, Huang-Kun Chen
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Abstract
A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
Claims31
A light-emitting diode device comprising:
- an epitaxial layer;
- a current blocking layer disposed at one side of the epitaxial layer and in contact with a portion of the epitaxial layer;
- and
- a current spreading layer disposed at the side of the epitaxial layer and in contact with the current blocking layer.
A manufacturing method of a light-emitting diode device, comprising steps of:
- forming an epitaxial layer on a first substrate;
- forming a current blocking layer on the epitaxial layer;
- and
- forming a current spreading layer on the current blocking layer or a portion of the epitaxial layer.
A manufacturing method of a light-emitting diode device, comprising steps of:
- forming a first semiconductor layer on an epitaxial substrate;
- forming a light-emitting layer on the first semiconductor layer;
- forming a second semiconductor layer on the light-emitting layer, wherein the second semiconductor layer has a first micro-nano structure;
- removing a portion of the second semiconductor layer and a portion of the light-emitting layer to expose a portion of the first semiconductor layer;
- forming a current blocking layer to cover a portion of the second semiconductor layer, a portion of the light-emitting layer and a portion of the first semiconductor layer;
- and
- forming a current spreading layer on a portion of the second semiconductor layer and a portion of the current blocking layer.
Dependencies are inferred from the claim text.