Light-emitting diode and light-emitting diode lamp

A light-emitting diode comprising:

• a first conductive type silicon single crystal substrate (101);
• a light-emitting section (40) including a first pn junction structure composed of a III-group nitride semiconductor on the silicon single crystal substrate;
• a first polarity ohmic electrode (107b) formed on a first conductive type semiconductor provided on the light-emitting section;
• and
• a second polarity ohmic electrode (108) formed on a second conductive type semiconductor on the same side as the light-emitting section with respect to the silicon single crystal substrate,
• wherein a second pn junction structure (30) is formed in a region which extends from the first conductive type silicon single crystal substrate to the light-emitting section,
• a light-reflecting hole (109) is provided in the silicon single crystal substrate from the back surface of the substrate opposite to the side on which the light-emitting section of the silicon single crystal substrate is provided toward a stacking direction, and
• an inner surface of the light-reflecting hole and a back surface of the silicon single crystal substrate are coated with a metallic film (110).