III-Nitride Semiconductor Light Emitting Device
AssigneeEpivalley Co., Ltd.
InventorChang Myung Lee
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Abstract
The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.
Claims11
A III-nitride semiconductor light emitting device, comprising:
- an active layer for generating light by recombination of electrons and holes;
- an n-type nitride semiconductor layer positioned on one side of the active layer;
- and
- a p-type nitride semiconductor layer positioned on the other side of the active layer to be opposite to the n-type nitride semiconductor layer, and including a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with a rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.
A III-nitride semiconductor light emitting device, comprising:
- an active layer for generating light by recombination of electrons and holes;
- an n-side electrode for supplying the electrons to the active layer;
- a p-side electrode for supplying the holes to the active layer;
- an n-type nitride semiconductor layer electrically contacting the n-side electrode;
- and
- a p-type nitride semiconductor layer electrically contacting the p-side electrode, and including a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a lower doping concentration than the first doping concentration and with a rough surface, and a third nitride semiconductor layer positioned between the second nitride semiconductor layer and the p-side electrode to lower a contact resistance between the p-side electrode and the p-type nitride semiconductor layer.
Dependencies are inferred from the claim text.