Blue-green light-emitting semiconductor and phosphor for same

Abstract

A blue-green light emitting semiconductor having an In—Ga—N heterostructure and covered with a light-converting layer formed of a thermosetting polymer layer and an inorganic phosphor having a long wave Stokes radiation displacement characteristic, characterized in that the In—Ga—N semiconductor heterostructure emits light in near ultraviolet region λ=375˜405 nm, the light-converting layer converts the emission λ=375˜405 nm to wavelength λ=505˜515 nm; the wavelength light emitted by the light-converting layer has Stokes displacement 135˜105 nm, color coordinates 0.15<x≦0.22, 0.55<y≦0.60, spectrum curve half-wave width Δλ≦60 nm, and afterglow duration smaller than 100 ns. The invention also discloses a phosphor for use in a blue-green light-emitting semiconductor.

Dependencies are inferred from the claim text.