Orange-yellow silicate phosphor and warm white semiconductor using same
AssigneesWei-Hung Lo, Chen-Pei Hsu
InventorsSoshchin Naum, Wei-Hung Lo, Chi-Ruei Tsai
Life of this patent
Estimating the term…
Abstract
A silicate phosphor prepared from Mg2Me+20.5Ln3Si2.5O12-2yN−3yF−1y, in which Me+2=Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements such as Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2. The phosphor has a cubic garnet architecture prepared by solid phase synthesis, and radiates at green, green-yellow, yellow-orange spectrum regions. When mixed with (Y,Gd,Ce)3Al5O12 substrate-based phosphor, the compound mixture has warm white radiation and color temperature T<4000K with high luminous intensity and high luminescence efficiency. The invention also provides a warm white semiconductor using the silicate phosphor.
Claims14
A yellow-orange silicate phosphor used in a warm-white semiconductor, comprising a silicon oxide substrate having a garnet crystal architecture and excited by d-element, wherein said silicon oxide substrate has the stoichiometric equation Mg2.0Me+20.5Ln3Si2.5O12-2yNyFy:Akx+n in which Ln=Sc and/or Lu and/or Yb and/or Er and/or Ho;
- Me+2=Ca and/or Sr and/or Ba;
- the phosphor is excited d,f-element ions that came from Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2, and formed of one single element or a pair of elements, i.e., Cu+1+Ce3, Cu+1+Mn+2 or Ag+1+Ce+3;
- the phosphor produces a yellow-orange luminance radiation at a specific wavelength when excited by the shortwave light of a nitride semiconductor heterostructure, and at the same time these two radiations are mixed to produce warm white light.
Dependencies are inferred from the claim text.