Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device

An electro-luminescence device, comprising:

• a gate bus line extending in a first direction over a substrate;
• a data bus line extending in a second direction over the substrate;
• a power supply line extending parallel to the data bus line over the substrate;
• a switching transistor electrically connected to the gate bus line, the switching transistor comprising:
• a first gate electrode extending from the gate bus line;
• a first semiconductor pattern formed on the first gate electrode;
• a first etch stop layer formed on the first semiconductor pattern;
• a first source electrode formed on the first semiconductor pattern, the first source electrode extending from the data bus line;
• and
• a first drain electrode formed on the first semiconductor pattern;
• a driving transistor electrically connected to the power supply line, the driving transistor comprising:
• a second gate electrode electrically connected to the first drain electrode of the switching transistor;
• a fourth semiconductor pattern formed over the second gate electrode;
• a second etch stop layer formed over the fourth semiconductor pattern;
• a second source electrode formed on the fourth semiconductor layer, the second source electrode extending from the power supply line;
• and
• a second drain electrode formed on the fourth semiconductor layer;
• an electro-luminescence element electrically connected to the second drain electrode of the driving transistor.