Thin film transistor, display device including the same and manufacturing method thereof

A display device comprising:

• a first thin film transistor comprises a first control electrode, a first semiconductor which overlaps the first control electrode, and a first input electrode and a first output electrode opposite to each other adjacent to the first semiconductor;
• and
• a second thin film transistor comprises a second control electrode, a second semiconductor which overlaps the second control electrode, and a second input electrode and a second output electrode opposite to each other on or under the second semiconductor,
• the first semiconductor comprises
• a first portion disposed between the first input electrode and the first output electrode, and having a first crystallinity, and
• a second portion which overlaps the first input electrode or the first output electrode and having a second crystallinity, wherein the first crystallinity is higher than the second crystallinity.

A method for manufacturing a display device, the method comprising:

• forming first and second control electrodes;
• forming first and second semiconductors and first and second ohmic contact layers on the first and second control electrodes;
• respectively forming a pair of a first input electrode and a first output electrode and a pair of a second input electrode and a second output electrodes on the first and second ohmic contact layers;
• removing the first ohmic contact layer between the first input electrode and the first output electrode, and the second ohmic contact layer between the second input electrode and the second output electrode, to expose the first and second semiconductors;
• and
• irradiating a laser on the exposed portion of the first semiconductor.

A method for manufacturing a display device, the method comprising:

• forming first and second control electrodes;
• sequentially depositing a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the first and second control electrodes;
• etching the semiconductor layer and the ohmic contact layer to form a first semiconductor and a first ohmic contact layer disposed on the first control electrode, and a second semiconductor and a second ohmic contact layer disposed on the second control electrode;
• removing a portion of the first and second ohmic contact layers to expose a portion of the first and second semiconductors;
• irradiating a laser on the exposed portion of the first semiconductor;
• and
• forming a pair of a first input electrode and a first output electrode disposed on the first ohmic contact layer and a pair of a second input electrode and a second output electrode disposed on the second ohmic contact layer.