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US 2009/0152536 A1Published application
Dna-based electronic diodes and their applications
AssigneeIPICOM, Inc.
InventorDe Yu Zang
Life of this patent
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Abstract
A semiconductor device provides a metal contact, a DNA layer, wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between, and a conductive contact with the DNA layer.
Claims10
A semiconductor device, comprising:
- a metal contact;
- a DNA layer;
- wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between;
- and
- a conductive contact with the DNA layer.
2 more elements
A photodiode, comprising:
- a metal contact;
- a DNA layer;
- wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between;
- and
- a conductive contact with the DNA layer.
2 more elements
Dependencies are inferred from the claim text.