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US 2009/0152530 A1Published application
Image sensor including photoelectric charge-trap structure
OwnerSung-Min Ahn, Jeong-Ho Leeinventors
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Abstract
A pixel of an image sensor includes a first insulating structure, a photoelectric charge-trap structure, a second insulating structure, and a gate electrode. The first insulating structure is formed on a substrate, and the photoelectric charge-trap structure is formed on the first insulating structure. The second insulating structure is formed on the photoelectric charge-trap structure. The gate electrode is formed on the second insulating structure. The photoelectric charge-trap structure converts a significant amount of light reaching the pixel into charge carriers.
Claims20
A pixel of an image sensor, the pixel comprising:
- a first insulating structure formed on a substrate;
- a photoelectric charge-trap structure formed on the first insulating structure;
- a second insulating structure formed on the photoelectric charge-trap structure;
- and
- a gate electrode formed on the second insulating structure,
- wherein the photoelectric charge-trap structure converts a significant amount of light reaching the pixel into charge carriers.
3 more elements
Dependencies are inferred from the claim text.