Light emitting devices with inhomogeneous quantum well active regions
AssigneePalo Alto Research Center Incorporated
InventorsChristopher L. Chua, Zhihong Yang, John E. Northrup, Noble Marshall Johnson
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Abstract
A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
Claims25
A light-emitting device comprising:
- a first quantum well;
- and
- first sub-layers included in the first quantum well, an alloy composition of one layer of the first sub-layers different than an alloy composition of another layer of the first sub-layers, a wavelength of the light emitted by the first quantum well defined by a bandgap of an average composition of the first sub-layers.
A method of fabricating a light emitting device comprising modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
A light emitting device comprising:
- barrier layers;
- and
- quantum well layers separated by and disposed between the barrier layers, the quantum well layers exhibiting a controlled composition fluctuation across each of the quantum well layers.
A light-emitting device comprising:
- a first quantum well;
- a second quantum well disposed below the first quantum well;
- and
- a barrier layer disposed between the first and second quantum wells, the barrier layer comprising first sub-layers, an alloy composition of one layer of the first sub-layers different than an alloy composition of another layer of the first sub-layers, an energy offset between the barrier layer and one of the first and second quantum wells defined by a bandgap of an average composition of the first sub-layers.
Dependencies are inferred from the claim text.