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US 2009/0152527 A1Published application
Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
AssigneeSamsung Electronics Co., Ltd.
InventorsEun Kyung LEE, Dongmok WHANG, Byoung Lyong CHOI, Byung Sung KIM
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Abstract
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.
Claims11
A method for producing nanowires, comprising
- wet etching the surface of a silicon substrate to leave defect sites,
- exposing the wet-etched silicon substrate to deionized water or air to form an oxide layer thereon, and
- heating the resulting silicon substrate in a furnace while feeding a nanowire precursor into the furnace to grow silicon nanowires from silicon nuclei formed within the oxide layer.
Dependencies are inferred from the claim text.