# US 2009/0152506 A1 · Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film

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- Number: US 2009/0152506 A1
- Document ID: US20090152506A1
- Status: Published application
- Kind: A1
- Application number: 12/337,072
- Filed: 2008-12-17
- Published: 2009-06-18
- Earliest claimed: 2007-12-17
- Assignees: FUJIFILM Corporation
- Inventors: Kenichi UMEDA; Hiroyuki Hirai; Atsushi Tanaka; Katsuhiro Kohda; Kohei Higashi; Hiroshi Sunagawa
- Web page: https://patentgrep.com/patent/US20090152506A1

## CPC

- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- C30B 1/02: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
- C30B 29/22: Complex oxides
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10P 14/265: {using solutions}
- H10P 14/3426: {Oxides}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

## Claims

### Claim 1

A process for producing an oriented in organic crystalline film, comprising the steps of:
(A) forming on a substrate a non-monocrystalline film containing inorganic crystalline particles by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material; and
(B) crystallizing said non-monocrystalline film by heating the non-monocrystalline film to a temperature equal to or higher than a crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

### Claim 2 (depends on 1)

A process according to claim 1, wherein said part of the inorganic crystalline particles are dispersed in said non-monocrystalline film in said step (A).

### Claim 3 (depends on 1)

A process according to claim 1, wherein said oriented inorganic crystalline film is composed of oxide and inevitable impurities.

### Claim 4 (depends on 3)

A process according to claim 3, wherein said oxide is a composite oxide expressed by a compositional formula,
NxMyRzO(x+3y/2+3z/2−d),
where R is In, M is at least one of In, Fe, Ga, and Al, N is at least one of Zn and Mg, each of x, y, and z is a real number greater than zero, d indicates an amount of oxygen deficiency, and x, y, z, and d satisfy the relationship,
0≦d≦(x+3y/2+3z/2)/10.

### Claim 5 (depends on 1)

A process according to claim 1, wherein said oriented inorganic crystalline film is (00n) orientated, and n is a positive integer.

### Claim 6 (depends on 1)

A process according to claim 1, wherein said inorganic crystalline particles in said part have an average diameter equal to or greater than 2 nm and smaller than a thickness of said non-monocrystalline film.

### Claim 7 (depends on 1)

A process according to claim 1, wherein said inorganic crystalline particles are produced by a sol-gel process using a raw-material solution which contains an organic precursor material and an organic solvent, and the organic precursor material contains all constituent elements of said oriented inorganic crystalline film.

### Claim 8 (depends on 1)

A process according to claim 1, wherein said substrate is an amorphous substrate.

### Claim 9 (depends on 8)

A process according to claim 8, wherein said substrate is a resin substrate.

### Claim 10 (depends on 8)

A process according to claim 8, wherein said substrate is a glass substrate.

### Claim 11 (depends on 1)

A process according to claim 1, wherein said non-monocrystalline film is crystallized in said step (B) by heating the non-monocrystalline film with thermic rays.

### Claim 12 (depends on 11)

A process according to claim 11, wherein said thermic rays are pulsed laser rays.

### Claim 13 (depends on 1)

An oriented inorganic crystalline film produced by said process according to claim 1.

### Claim 14 (depends on 13)

An oriented inorganic crystalline film according to claim 13, being a semiconductor film.

### Claim 15 (depends on 14)

A semiconductor device comprising said oriented inorganic crystalline film according to claim 14.