Plasma processing apparatus and method thereof

Abstract

[Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric. [Means for Solving] A plasma processing apparatus 1, in which microwave is propagated into a dielectric 32 provided on an upper surface of a processing chamber 4 via plural slots 70 formed on a lower surface of a waveguide 35 and a processing gas supplied in the processing chamber 4 is made into plasma using electric field energy of an electromagnetic field formed on the surface of the dielectric to perform plasma processing on a substrate G. The plasma processing apparatus 1, concave portions 80a to 80g having different depth are formed on a lower surface of dielectric 32. Further, the depths of the respective concave portions 80a to 80g are made different to control a plasma generation on the lower surface of the dielectric 32.

Dependencies are inferred from the claim text.