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US 2009/0151870 A1Published application
Silicon carbide focus ring for plasma etching system
AssigneeTokyo Electron Limited
InventorsMasafumi URAKAWA, Akiteru KO
Life of this patent
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Abstract
A high resistivity silicon carbide focus ring for use in a plasma etching system is described. The focus ring comprises an upper surface, a lower surface, an inner radial edge, and an outer radial edge, and is configured to surround a substrate on a substrate holder in a plasma processing system. The focus ring comprises high resistivity silicon carbide having a resistivity greater than or equal to about 100 ohm-cm.
Claims15
A focus ring for surrounding a substrate on a substrate holder in a plasma processing system, comprising:
- a focus ring having an upper surface, a lower surface, an inner radial edge, and an outer radial edge, wherein said focus ring comprises high resistivity silicon carbide having a resistivity greater than or equal to about 100 ohm-cm.
Dependencies are inferred from the claim text.