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US 2009/0151788 A1Published application
P-type doped layer of photoelectric conversion device and method of fabricating the same
AssigneeIndustrial Technology Research Institute
InventorChih-Jeng Huang
Life of this patent
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Abstract
A P-type doped layer of a photoelectric conversion device is provided. The P-type doped layer is a double layer structure including a seeding layer and a wide band gap layer disposed thereon. The P-type doped layer with the double layer structure has both high conductivity and high photoelectric performance.
Claims15
A P-type doped layer of a photoelectric conversion device, comprising:
- a seeding layer;
- and
- a wide band gap layer disposed on the seeding layer.
A method of fabricating a P-type doped layer of a photoelectric conversion device, comprising:
- forming a seeding layer on a transparent conductivity substrate, wherein a gas of forming the seeding layer comprises silane and hydrogen, and an initial flow rate ratio of silane to hydrogen is between 1:100 and 1:50;
- and
- forming a wide band gap layer on the seeding layer.
Dependencies are inferred from the claim text.