# US 2009/0151624 A1 · High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot

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- Number: US 2009/0151624 A1
- Document ID: US20090151624A1
- Status: Published application
- Kind: A1
- Application number: 12/325,014
- Filed: 2008-11-28
- Published: 2009-06-18
- Earliest claimed: 2007-12-14
- Assignees: Japan Super Quartz Corporation
- Inventors: Atushi SHIMAZU
- Web page: https://patentgrep.com/patent/US20090151624A1

## CPC

- C30B 15/10: Crucibles or containers for supporting the melt
- C30B 29/06: Silicon
- Y10S 117/90: Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
- Y10T 117/10: Apparatus
- Y10T 117/1032: Seed pulling
- Y10T 117/1052: including a sectioned crucible [e.g., double crucible, baffle]
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica s with a bubble content of 0.6% or less and a purity of 99.99% or higher, wherein, at least for an inner surface of the vitreous silica crucible between ingot-pulling start line and ingot-pulling end line of a silicon melt surface, a longitudinal section of the inner surface is shaped into a waveform, and depth and width of the ring grooves constituting the multi ring-groove patterned face are set in the range of 0.5 to 2 mm and 10 to 100 mm, respectively.

## Claims

### Claim 1

A vitreous silica crucible for pulling a single-crystal silicon ingot, comprising a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica with a bubble content of 0.6% or less and a purity of 99.99% or higher,
wherein, with regard to an inner surface of the high-purity vitreous silica crucible, at least for the inner surface between ingot-pulling start line and ingot-pulling end line of a silicon melt surface,
(a) a longitudinal section of the inner surface is shaped into a waveform to be a multi ring-groove patterned face, and
(b) depth of the ring grooves constituting the multi ring-groove patterned face is set in the range of 0.5 to 2 mm and width of the ring grooves constituting the multi ring-groove patterned face is set in the range of 10 to 100 mm, respectively, thereby reducing pinhole defects in the large-diameter single-crystal silicon ingot.