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US 2009/0151623 A1Published application
Formation and applications of high-quality epitaxial films
AssigneeAtmel Corporation
InventorDarwin Gene Enicks
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Abstract
A method and system for forming high-quality epitaxial films. In one embodiment, the method includes cleaning a substrate, reducing adsorbed moisture on the substrate in a predefined temperature and predefined oxygen level atmosphere, and removing native oxide from the substrate. The method also includes prebaking the substrate and growing an epitaxial layer doped with an impurity, wherein the impurity has a nano-impurity profile.
Claims20
A method comprising:
- cleaning a substrate;
- reducing adsorbed moisture on the substrate in a predefined temperature and predefined oxygen level atmosphere;
- removing native oxide from the substrate;
- prebaking the substrate;
- and
- growing an epitaxial layer doped with an impurity, wherein the impurity has a nano-impurity profile.
3 more elements
A system comprising:
- a load lock chamber operable to reduce adsorbtion of moisture on the substrate in a predefined temperature and predefined oxygen level atmosphere;
- a transfer chamber being coupled to the load lock chamber and operable to transfer the substrate to the process chamber;
- a process chamber being coupled to the transfer chamber and operable to prebake the substrate and to grow an epitaxial layer doped with an impurity, wherein the impurity has a nano-impurity profile.
Dependencies are inferred from the claim text.