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US 2009/0108251 A1Published application
Controlled growth of a nanostructure on a substrate
AssigneeSmoltek AB
InventorMohammad Shafiqul Kabir
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Abstract
The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
Claims36
A nanostructure assembly comprising:
- a conducting substrate;
- a nanostructure supported by the conducting substrate;
- and
- a plurality of intermediate layers between the conducting substrate and the nanostructure,
- wherein at least two of the plurality of intermediate layers are interdiffused, and
- wherein material of the at least two of the plurality of intermediate layers that are interdiffused are present in the nanostructure, the plurality of intermediate layers including at least one layer that affects a morphology of the nanostructure and at least one layer to affect an electrical property of an interface between the conducting substrate and the nanostructure, and
- wherein at least one of the plurality of intermediate layers comprises material selected from the group consisting of amorphous silicon and germanium.
4 more elements
A carbon nanostructure assembly comprising:
- a conducting substrate;
- a layer of amorphous silicon on the conducting substrate;
- and
- a layer of catalyst on the layer of amorphous silicon,
- wherein the carbon nanostructure is disposed on the catalyst, and
- wherein the layer of catalyst and the layer of amorphous silicon are interdiffused, and wherein material of the layer of catalyst and the layer of amorphous silicon that are interdiffused are present in the carbon nanostructure.
3 more elements
A method of forming a nanostructure, comprising:
- depositing a layer of semiconducting material on a conducting substrate;
- depositing one or more intermediate layers, wherein at least one of the plurality of intermediate layers comprises material selected from the group consisting of amorphous silicon and germanium;
- depositing a catalyst layer on the one or more intermediate layers;
- without first annealing the substrate, causing the substrate to be heated to a temperature at which the nanostructure can form;
- and
- growing a nanostructure on the catalyst layer at the temperature, wherein at least one of the one or more intermediate layers are interdiffused with the catalyst layer, and wherein material of the catalyst layer and the at least one of the one or more intermediate layers that are interdiffused are present in the nanostructure.
3 more elements
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Dependencies are inferred from the claim text.