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US 2009/0101910 A1Published application
Thin-film transistor
OwnerHongyong Zhang, Shunpei Yamazakiinventors
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Abstract
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking lay r and a gate insulator of the transistor.
Claims14
A semiconductor device comprising:
- a glass substrate;
- a protective film formed over the glass substrate;
- a non-single-crystalline semiconductor film formed over the protective film and including source and drain regions and a channel region formed between the source and drain regions, and
- a gate electrode adjacent to the channel region with a gate insulator therebetween,
- wherein the protective film includes a halogen element.
2 more elements
A semiconductor device comprising:
- a glass substrate;
- a protective film formed over the glass substrate;
- a semiconductor film formed over the protective film and including source, drain and channel regions;
- a gate electrode formed over the channel region with a gate insulator therebetween;
- and
- wherein the protective film contains a halogen element at a concentration not higher than 5 atom %.
3 more elements
A semiconductor device comprising:
- a glass substrate;
- a protective film formed over the glass substrate;
- a non-single-crystalline semiconductor film formed over the protective film and including source, drain and channel regions;
- a gate electrode adjacent to the channel region with a gate insulator therebetween,
- wherein each of the gate insulator and the protective film contains a halogen element.
2 more elements
A semiconductor device comprising:
- a glass substrate;
- a protective film comprising silicon oxide formed on and in contact with the glass substrate;
- a semiconductor film formed over the protective film and including source and drain regions and a channel region extending therebetween;
- a gate insulator formed over the channel region;
- and
- a gate electrode formed over the gate insulator,
- wherein the protective film contains a halogen element and directly contacts the semiconductor film.
4 more elements
Dependencies are inferred from the claim text.