Dual-gate memory device with channel crystallization for multiple levels per cell (mlc)
OwnerAndrew J. Walkerinventor
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Abstract
A method and a dual-gate memory device having a memory transistor and an access transistor are provided to allow multiple bits to be stored in the dual-gate memory device. The memory transistor and the access transistor each have a channel region formed in a mobility enhanced material crystallized from an amorphous semiconductor material. The amorphous semiconductor material may include, for example, silicon. Mobility enhancement may be achieved by: (a) Excimer laser annealing; (b) lateral crystallization; (c) metal-induced lateral crystallization; (d) a combination of laser annealing and metal-induced laterally crystallization steps; or (e) solid-phase, epitaxially growth.
Claims22
A dual-gate memory device, comprising:
- a memory transistor having a channel region and source-drain regions formed in a semiconductor layer, wherein the semiconductor layer comprises a mobility enhanced material crystallized from an amorphous semiconductor material;
- and
- an access transistor having a channel region in the semiconductor layer and sharing the source-drain regions of the memory transistor.
A method for providing a dual-gate memory device, comprising:
- forming a layer of amorphous semiconductor material;
- crystallizing the amorphous semiconductor material to form a crystallized semiconductor layer using a mobility enhancement technique;
- and
- forming in the crystallized semiconductor layer a channel region for a memory transistor of the dual-gate memory device, a channel region for an access transistor of the dual-gate memory device and common source-drain regions for the memory transistor and the access transistor of the dual gate device.
Dependencies are inferred from the claim text.