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US 2009/0081854 A1Published application
Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn Kim, Joong S. Jeong, Eun-ju Bae
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Abstract
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
Claims20
A method of forming a nanowire comprising:
- forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1) on a base layer;
- and
- forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
A method of manufacturing a semiconductor device comprising:
- forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1) on a base layer;
- forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer;
- removing the first oxide layer;
- and
- forming first and second conductive regions that respectively contact an end and the other end of the nanowire.
2 more elements
Dependencies are inferred from the claim text.