Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
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Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
Claims20
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- forming an oxide film on the semiconductor film;
- disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal is introduced into the semiconductor film through the oxide film whereby the semiconductor film is crystallized.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- forming an oxide film on a selected region of the semiconductor film;
- disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal is introduced into the semiconductor film through the oxide film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- forming a silicon containing film on the semiconductor film;
- disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal is introduced into the semiconductor film through the silicon containing film whereby the semiconductor film is crystallized.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- forming a silicon containing film on a selected region of the semiconductor film;
- disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal is introduced into the semiconductor film through the silicon containing film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region.
Dependencies are inferred from the claim text.