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US 2009/0029533 A1Published application
Method of controlling film stress in mems devices
AssigneeDALSA Semiconductor Inc.
InventorsVincent Fortin, Luc Ouellet
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Abstract
A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
Claims20
A method of fabricating a structural film in MEMS or NEMS devices, comprising:
- vapor depositing said film in the presence of a dopant precursor gas and a carrier gas;
- and
- selecting as said carrier gas an inert gas other than nitrogen.
A method of fabricating a structural silicon film in MEMS or NEMS devices, comprising:
- depositing said silicon film by LPCVD in the presence of a dopant precursor gas and argon as a carrier gas.
Dependencies are inferred from the claim text.