Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus
AssigneeFujitsu Microelectronics Limited
InventorKatsuaki OOKOSHI
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Abstract
A method of manufacturing a semiconductor device has supplying a first reactant gas into buffer chamber provided in a reaction chamber of the film deposition apparatus to form a first film over an inner wall surface of the buffer chamber, and supplying a second reactant gas into the reaction chamber to form a second film over a semiconductor substrate.
Claims19
A film deposition apparatus, comprising:
- a reaction chamber housing a substrate;
- a buffer chamber provided in the reaction chamber;
- a first gas supply section supplying a first reactant gas and a second reactant gas into the buffer chamber;
- and
- a plasma generator generating plasma in the buffer chamber.
A method of manufacturing a semiconductor device, the method using a film deposition apparatus including a reaction chamber, a buffer chamber provided in the reaction chamber, a first gas supply section outletting into the buffer chamber, and a plasma generator generating plasma in the buffer chamber, wherein the method comprises:
- supplying a second reactant gas into the buffer chamber, and forming a first film over an inner wall surface of the buffer chamber;
- housing a semiconductor wafer within the reaction chamber;
- and
- supplying the first reactant gas into the reaction chamber, thereby to form a second film over the semiconductor substrate.
A method of coating a film deposition apparatus, the method using the film deposition apparatus which includes a reaction chamber, a buffer chamber provided in the reaction chamber, a gas supply section supplying a first reactant gas into the buffer chamber, and a plasma generator generating plasma in the buffer chamber, wherein the method comprises:
- causing the plasma generator to generate the plasma in the buffer chamber;
- supplying the first reactant gas into the buffer chamber;
- and
- supplying a second reactant gas different from the first reactant gas into the buffer chamber.
Dependencies are inferred from the claim text.