Reduction of defects formed on the surface of a silicon oxynitride film
AssigneeSpansion LLC
InventorNoriyuki Yokonaga
Life of this patent
Estimating the term…
Abstract
Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
Claims20
A method for reducing defects on a semiconductor device, comprising:
- forming a silicon oxynitride film on a semiconductor substrate;
- and
- heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
A method for performing a shallow trench isolation in an integrated circuit device, comprising:
- forming a pattern of trenches in a semiconductor substrate during a process of the shallow trench isolation;
- and
- heating the integrated circuit device prior to treating the trenches with a hydrofluoric acid.
A method for forming contact holes in an insulating film in an integrated circuit device, comprising:
- forming a pattern of contact holes on an interlayer insulating film;
- and
- heating the integrated circuit device prior to treating the trenches with a hydrofluoric acid.
Dependencies are inferred from the claim text.