Method for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
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Abstract
A method for manufacturing a semiconductor device includes forming an impurity diffusion layer in a surface of a semiconductor substrate, wherein the forming the impurity diffusion layer comprises irradiating material including M1x M2y (y/x≦1.2, where x is a ratio of M1, y is a ratio of M2, M1 is material which serves as acceptor or donor in the semiconductor device, M2 is material which does not serve as neither donor nor acceptor in the semiconductor device (except semiconductor of the semiconductor substrate)) onto the semiconductor substrate, and heating the semiconductor substrate by light.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming an impurity diffusion layer in a surface of a semiconductor substrate, wherein the forming the impurity diffusion layer comprises irradiating material including M1x M2y (y/x≦1.2, where x is a ratio of M1, y is a ratio of M2, M1 is material which serves as acceptor or donor in the semiconductor device, M2 is material which does not serve as neither donor nor acceptor in the semiconductor device (except semiconductor of the semiconductor substrate)) onto the semiconductor substrate, and heating the semiconductor substrate by light.
Dependencies are inferred from the claim text.