Back to results
US 2009/0023273 A1Published application
Method of fabricating semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorHan Choon LEE
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device comprising forming a transistor on a semiconductor substrate, forming an interlayer insulating film on the semiconductor substrate to cover the transistor, forming a passivation film on the interlayer insulating film, and annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group of boron, silicon and hydrogen.
Claims15
A method of fabricating a semiconductor device comprising:
- forming a transistor on a semiconductor substrate;
- forming an interlayer insulating film on the semiconductor substrate to cover the transistor;
- forming a passivation film on the interlayer insulating film;
- and
- annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group consisting of boron, silicon and hydrogen.
2 more elements
A method of fabricating a semiconductor device comprising:
- forming a photodiode on a semiconductor substrate including a first region including first impurities and a second region including second impurities;
- forming an interlayer insulating film on the semiconductor substrate to cover the photodiode;
- forming a passivation film on the interlayer insulating film;
- and
- annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group consisting of boron, silicon, and hydrogen.
2 more elements
A method of fabricating a semiconductor device comprising:
- forming a P-type MOS transistor in a first region of a semiconductor substrate by implanting the first region with a first set of impurities;
- forming an N-type MOS transistor in a second region of a semiconductor substrate by implanting the second region with a second set of impurities;
- forming an interlayer insulating film on the semiconductor substrate to cover the P-type MOS transistor and N-type MOS transistor;
- forming a passivation film on the interlayer insulating film;
- and
- annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group consisting of boron, silicon and hydrogen at a temperature between 300° C. and 420° C.
3 more elements
Dependencies are inferred from the claim text.