Method to manufacture a thin film resistor

A method of manufacturing a semiconductor device, comprising:

• forming transistors on a semiconductor substrate;
• forming one or more thin film resistors, on said semiconductor substrate, wherein at least one of said thin film resistors is fabricated by a process that includes:
• depositing a resistive material layer on a semiconductor substrate;
• depositing a first insulating layer on said resistive material layer;
• performing a first dry etch process on said first insulating layer to form an insulative body;
• performing a second dry etch process on said resistive material layer to form a resistive body, wherein said resistive body and said insulative body have substantially identical perimeters;
• covering said resistive body and said insulative body with a second insulating layer;
• forming openings in said second insulating layer and said insulative body, wherein said openings expose opposite ends of said resistive body;
• and
• filling said openings with metal to form interconnects, wherein said interconnects couple said resistive body to at least one of said transistors or another of said thin film resistors;
• and
• depositing one or more interlayer insulating layers on said semiconductor substrate, wherein said transistors and said thin film resistor are covered by at least one of said insulating layers;
• and
• forming interlayer interconnects through one or more of said interlayer insulating layers, wherein said interlayer interconnects couple said transistors to each other, or to said at least one thin film resistor.