Method of controlling metal silicide formation
AssigneeApplied Materials, Inc.
InventorsSUNDAR RAMAMURTHY, Majeed A. Foad
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Abstract
Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.
Claims19
A method of processing a substrate, comprising:
- providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover;
- doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover;
- and
- forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.
A method of processing a substrate, comprising:
- providing a substrate having exposed source and drain regions and an exposed gate layer comprising polysilicon;
- doping the polysilicon gate layer to reduce a rate of formation of a metal silicide over the polysilicon gate layer;
- and
- forming a metal silicide layer upon the source and drain regions and the doped polysilicon gate layer, wherein the metal silicide layer has a reduced thickness differential between the source and drain regions and the doped polysilicon gate layer.
Dependencies are inferred from the claim text.