Vacuum jacket for phase change memory element
AssigneeMacronix International Co., Ltd.
InventorHSIANG-LAN LUNG
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Abstract
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase change element; a bit line electrode in contact with the upper electrode element; and a dielectric fill layer surrounding the phase change element and the upper electrode element, spaced from the same and sealed by the bit line electrode to define a vacuum jacket around the phase change element and upper electrode element.
Claims13
A method of fabricating a memory device, comprising:
- forming a first electrode;
- forming a memory element electrically coupled to the first electrode;
- forming an second electrode electrically coupled to the memory element, the second electrode and the memory element arranged in electrical series;
- and
- forming a dielectric fill layer spaced from the memory element and the second electrode to define a vacuum jacket surrounding the memory element and at least a portion of the second electrode.
A method of fabricating a memory device, comprising the steps of:
- forming a memory element and a second electrode on a first electrode;
- depositing a liner layer on the memory element and second electrode;
- forming a dielectric layer surrounding the memory element and second electrode, the upper surface of the dielectric layer being adjusted such that the liner surrounding the second electrode and the upper surface of the second electrode are exposed;
- selectively etching the liner layer to open a void between the memory element and second electrode and the dielectric layer;
- and
- depositing a bit line electrode element electrically coupled to the second electrode to seal the void, thereby defining a vacuum jacket around the memory element.
Dependencies are inferred from the claim text.