Semiconductor laser device and manufacturing method of the same

A method of manufacturing a semiconductor device comprising steps of:

• on a semiconductor substrate, epitaxial growing a laminated body including a first GaInP layer, an AlInP layer and a second GaInP layer in order from the semiconductor substrate side and then, laminating a resist mask having a predetermined shape on the laminated body;
• and
• selectively etching the laminated body until a surface of the first GaInP layer on the AlInP layer side is exposed by using the resist mask as a mask, the laminated body is immersed in a first etchant without agitating the first etchant containing acetic acid, hydrogen peroxide solution and hydrochloric acid.

A method of manufacturing a semiconductor device comprising steps of:

• on a semiconductor substrate, epitaxial growing a laminated body including a first GaInP layer, an AlInP layer, a second GaInP layer and a GaAs layer in order from the semiconductor substrate side and then, processing the GaAs lay in a predetermined shape;
• and
• selectively etching the laminated body until a surface of the first GaInP layer on the AlInP layer side is exposed by using the GaAs layer as a mask, the laminated body is immersed in etchant without agitating the etchant containing acetic acid, hydrogen peroxide solution and hydrochloric acid.