Photomask and Method of Forming Overlay Vernier of Semiconductor Device Using the Same
AssigneeHynix Semiconductor Inc.
InventorYong Hyun Lim
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Abstract
This patent relates to a photomask and a method of forming an overlay vernier of a semiconductor device employing the same. The photomask includes a reticle formed of a first material through which light can transmit, a first pattern formed on the reticle and formed of a material through which light cannot transmit, a second pattern having a size smaller than the first pattern, and an auxiliary pattern formed to come in contact with the first pattern and formed of a second material different from the first material of the reticle. Thus, inclination is formed on side portions of the overlay vernier and a thin film may be easily formed on the overlay vernier.
Claims21
A photomask, comprising:
- a reticle formed of a first material through which light can transmit;
- a first pattern formed on the reticle and formed of a material through which light cannot transmit;
- a second pattern having a size smaller than that of the first pattern;
- and
- an auxiliary pattern formed to come in contact with the first pattern and formed of a second material different from the first material of the reticle.
A method of forming an overlay vernier of a semiconductor device, the method comprising:
- forming an etching object layer on a semiconductor substrate;
- forming a photoresist on the etching object layer;
- performing an exposure process on the photoresist by employing a photomask where a first light-shielding pattern and a second light-shielding pattern are formed on a reticle and an auxiliary pattern, the second light-shielding pattern having a size smaller than the first light-shielding pattern, and the auxiliary pattern formed in the reticle comes in contact with the first light-shielding pattern and is formed from a material different from a material of the reticle;
- forming photoresist patterns by performing a development process on the photoresist;
- and
- etching the etching object layer by employing the photoresist patterns.
A method of forming an overlay vernier of a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a photoresist on the substrate;
- performing an exposure process on the photoresist by employing a photomask where a first light-shielding pattern and a second light-shielding pattern are formed on a reticle and an auxiliary pattern, the second light-shielding pattern having a size smaller than the first light-shielding pattern, and the auxiliary pattern formed in the reticle comes in contact with the first light-shielding pattern and is formed from a material different from a material of the reticle;
- and
- forming photoresist patterns by performing a development process on the photoresist.
The method of claim 21, wherein providing a thin film to the overlay vernier and covering the overlay vernier.
Dependencies are inferred from the claim text.