Thin film compompositionally stratified multi-layer heterostructure for temperature insenstive low dielectric loss and enhanced tunability otm comunications devices and menthods for fabrication thereof

A method of fabricating a compositionally stratified perovskite oxide multi-layer heterostructure material, comprising:

• depositing Ba1-xSrxTiO3 perovskite oxide, where x is in the range of 0.36-0.44, inclusive, on a substrate;
• crystallizing the Ba1-xSrxTiO3 perovskite oxide, where x is in the range of 0.36-0.44, inclusive, producing a lower layer;
• depositing Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, onto the lower layer;
• crystallizing the Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, producing an intermediate layer;
• depositing Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, onto the intermediate layer;
• and
• crystallizing the Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, producing an upper layer, the upper layer having a bottom surface in contact with the intermediate layer and an opposing top surface.

A compositionally stratified perovskite oxide multilayer heterostructure material, comprising:

• a lower layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.36-0.44, inclusive, deposited on a substrate;
• an intermediate layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, in contact with the lower layer;
• and
• an upper layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, in contact with the intermediate layer, with the proviso that no BaTiO3 layer is disposed in contact with the upper layer