Plasma enhanced chemical vapor deposition technology for large-size processing
AssigneeApplied Materials, Inc.
InventorsYa-Tang YANG, Tae Kyung WON, Soo Young CHOI, Takako TAKEHARA, John M. WHITE
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Abstract
Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber
Claims22
A method for forming a film stack suitable for transistor fabrication, the method comprising:
- providing a substrate in a plasma enhanced chemical vapor deposition (PECVD) chamber,
- depositing a dual layer SiNx film on the substrate at a temperature less than about 300 degrees Celsius in the PECVD chamber;
- depositing a dual layer amorphous silicon film on the SiNx film at a temperature less than about 300 degrees Celsius in the PECVD chamber;
- and
- depositing a n-doped silicon film on the dual layer amorphous silicon film at a temperature less than about 300 degrees Celsius in the PECVD chamber.
A method for forming a film stack suitable for transistor fabrication, the method comprising:
- providing a substrate in a plasma enhanced chemical vapor deposition (PECVD) chamber,
- depositing a first SiNx layer at a rate greater than 1500 Å/min on the substrate at a temperature less than about 300 degrees Celsius in the PECVD chamber;
- depositing a second SiNx layer at a rate greater than 1500 Å/min on the first SiNx layer at a temperature less than about 300 degrees Celsius in the PECVD chamber, wherein the first SiNx layer has a more SiH content than the second SiNx layer;
- depositing a first a-Si:H layer at a rate less than 600 Å/min on the second SiNx layer at a temperature less than about 300 degrees Celsius in the PECVD chamber;
- depositing a second a-Si:H layer at a rate greater than 600 Å/min on the first a-Si:H layer at a temperature less than about 300 degrees Celsius in the PECVD chamber, wherein the second a-Si:H layer has a higher optical bandgap as compared to the second a-Si:H layer;
- and
- depositing a n-doped silicon film on the dual layer amorphous silicon film at a temperature less than about 300 degrees Celsius in the PECVD chamber.
Dependencies are inferred from the claim text.