Method for manufacturing wire grid device
AssigneeSamsung Electronics Co., Ltd.
InventorsSu-mi Lee, Chan-hwa Chung, Moon-gyu Lee, Jung-woo Lee
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Abstract
A method of manufacturing a wire grid device is provided. The method includes: forming SAM (self assembly monomer) nano patterns on a substrate; and forming a wire grid between neighboring SAM nano patterns on the substrate on which the SAM nano patterns are formed by using an electroless plating technique or forming the wire grid on the SAM nano patterns on the SAM nano patterns by using the SAM nano patterns as a seed layer by using the electroless plating technique.
Claims30
A method of manufacturing a wire grid device, the method comprising:
- (A) forming SAM (self assembly monomer) nano patterns on a substrate;
- and
- (B) forming a wire grid between neighboring SAM nano patterns on the substrate on which the SAM nano patterns are formed by using an electroless plating technique.
A method of manufacturing a wire grid device, the method comprising:
- (A) forming SAM (self assembly monomer) nano patterns on a substrate;
- and
- (B) forming the wire grid on the SAM nano patterns by using the electroless plating technique by using the SAM nano patterns as a seed layer.
Dependencies are inferred from the claim text.