US 2009/0022891 A1 · METHOD OF FORMING METAL FILM

Abstract

A method of forming a metal film, comprising the steps of: sublimating at least one metal compound selected from the group consisting of a cobalt compound, a ruthenium compound and a tungsten compound from a substrate having the above metal compound film formed thereon; and supplying the sublimated gas to a substrate for forming a metal film to decompose the gas, thereby forming a metal film on the surface of the first substrate. A method of forming a metal film which serves as a seed layer when a metal, especially copper is to be filled into the trenches of a substrate as an insulator by plating and as a barrier layer for preventing the migration of metal atoms to an insulating film when the substrate has no barrier layer and has excellent adhesion to the insulator.

Claims8

Dependent claims

A method of forming a metal film, comprising the steps of:

sublimating at least one metal compound selected from the group consisting of a cobalt compound, a ruthenium compound and a tungsten compound from a second substrate carrying the above metal compound onto a first substrate for forming a film thereon of at least one metal selected from cobalt, ruthenium and tungsten;
and
supplying the sublimated gas to the first substrate to decompose the gas, thereby forming a metal film on the surface of the first substrate.

Dependencies are inferred from the claim text.

Method of forming metal film

Life of this patent

Method of forming metal film

Life of this patent

Abstract

Claims8