Semiconductor light-emitting device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsYoshihiro Hisa, Tsutomu Yamaguchi, Takehiro Nishida, Kenji Hiramatsu
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Abstract
Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
Claims6
A semiconductor light-emitting device comprising:
- a plurality of semiconductor laser elements on a common substrate;
- Au plating on principal surfaces of the plurality of semiconductor laser elements;
- and
- a package on which the plurality of semiconductor laser elements are mounted with solder contacting the Au plating, wherein
- areas opposed to each other across a light-emitting area of each semiconductor laser element are designated a first area and a second area, and
- average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
A method of manufacturing a semiconductor light-emitting device, comprising:
- forming a plurality of semiconductor laser elements on a common substrate;
- forming Au plating principal surfaces of the plurality of semiconductor laser elements;
- and
- applying solder to the Au plating and mounting the plurality of semiconductor laser elements on a package with the solder, wherein
- areas opposed to each other across a light-emitting area of each semiconductor laser element are designated a first area and a second area, and
- average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
Dependencies are inferred from the claim text.